“Devices and equipment can now have bigger memory with no loss for at least 20 years or probably more. Currently pursued schemes with a very thin magnetic layer can only retain information for about a year,” Yang added.

“With the heavy reliance on our mobile phones these days, we usually need to charge them daily. Using our new technology, we may only need to charge them on a weekly basis,” Yang said.

The innovation is expected to change the architecture of computers, making them much easier to manufacture as it does away with many facilities such as flash memory, effectively bringing down the cost.

MRAM is emerging as the next big thing in data storage as it is non-volatile, which means that data can be retrieved even when the electronic equipment is not powered up.

The current methods of applying MRAM revolve round the technology which uses an ‘in-plane’, or horizontal, current-induced magnetisation.

This method uses ultra-thin ferromagnetic structures which are challenging to implement due to their thickness of less than 1 nanometre. Their manufacturing reliability is low and tends to retain information for only less than a year.

The NUS team, in collaboration with the King Abdullah University of Science and Technology in Saudi Arabia, was able to resolve this problem by incorporating magnetic multilayer structures as thick as 20 nanometre, providing an alternative film structure for transmission of electronic data and storage.

The findings are published in the journal Physical Review Letters.

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