AGNIT Semiconductors Wins NASSCOM Deep Tech Emerge 50 Award
- Only Indian startup with fully vertically integrated Gallium Nitride (GaN) semiconductor capabilities.
- Winner of multiple accolades, including IESA Semiconductor Startup Award 2025.
- Raised $4.87 million from 3one4 Capital, Zephyr Peacock, and Lakshmi Narayanan.
Incubated by Foundation for Science Innovation and Development (FSID), Indian Institute of Science (IISc), AGNIT is one of the very few companies in the world to have an in-house complete GaN semiconductor value chain. It has received several recognitions, such as the ELEVATE Startup Grant, Government of Karnataka (2021) and Semiconductor Startup Award 2025 by IESA.
"Receiving the Deep Tech Emerge 50 Award is a strong endorsement of our vision to position India as a leader in GaN semiconductor innovation," said Chandrasekar. "With RF GaN devices in customer-level testing and enthusiastic support from IISc and MeitY, we are stepping up to enhance India's standing in the international semiconductor value chain."
NASSCOM Future Forge 2025 marked India's most revolutionary deep tech startups, showcasing innovations addressing difficult problems and driving the country's growth through innovation.
In line with the 'Make in India' programme, AGNIT partnered with the Ministry of Defence under the iDEX programme in December 2023 by signing an MoU to work on next-generation wireless transmitters based on GaN for defence purposes. The five-year-old startup has already raised $4.87 million from 3one4 Capital, Zephyr Peacock, and Lakshmi Narayanan, ex-CEO of Cognizant.

