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On Semiconductor introduces IPD2 process
By siliconindia
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Friday, 28 May 2010, 18:19 IST
Bangalore:On semiconductor a high performance, energy silicon solutions for green electronics ushered in a new integrated passive device (IPD) process technology. The recent IPD2 process consist of a 5 ?m copper layer which increases the inductor performance and permits greater adaptability and supports the design of the cost-effective IPDs for RF system in package applications in portable electronics equipment.
"Integrating passive devices on a cost-effective, small-size platform with low insertion losses can provide a valuable solution for designers of battery powered portable electronics," said Rick Whitcomb, senior director, Custom Foundry Division, ON Semiconductor
The HighQ IPD2 process makes use of upgraded 8-inch wafer technology. The design is inclusive of baluns, low pass filters, band pass filters and diplexers. IPD2 based designs offer significant benefits for circuit designers which includes reduced cost, reduced thickness, small footprint and higher performance that helps in longer battery life.
On semiconductor provides featured designed tools and prototyping abilities for its IPD2 process technology. It favors the users to find out if their sophisticated solutions are suitable for conversion.