Hynix launches 'eco-friendly' DDR3 device
By siliconindia   |   Tuesday, 13 October 2009, 17:53 IST
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Seoul: Hynix Semiconductor has unveiled its second generation 1Gbit DDR3 SDRAM device, based on 54 nanometer (nm) process technology. The company claims that the device, which operates at 1.5 volts, reduces power consumption by 30 percent over the previous devices. The product was launched during the 11th International Semiconductor 2009 (i-Sedex) trade show in Seoul. The device is offered in x4 (H5TQ1G43TFR) and x8 (H5TQ1G83TFR) organizations, reports EE Times. According to Hynix, applications like datacenters, servers and supercomputers and also mobile applications requiring longer battery life could take advantage of this product. The device, which is said to be an 'eco-friendly' design, has been produced in mass volume from this month. The new design philosophy will also be applied to future design of DRAM components including 2Gbit DDR3 with 40-nm-class technology.

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