Indian-Origin Physicist Discovers Material Better Than Graphene

WASHINGTON: A team led by an Indian-origin scientist in US has discovered a new kind of 2D semiconducting material for electronics that opens the door for much speedier computers and smartphones that consume a lot less power.

The semiconductor, made of the elements tin and oxygen, or tin monoxide (SnO), is a layer of 2D material only one atom thick, allowing electrical charges to move through it much faster than conventional 3D materials such as silicon.

This material could be used in transistors, the lifeblood of all electronic devices such as computer processors and graphics processors in desktop computers and mobile devices, according to Ashutosh Tiwari, associate professor at the University of Utah in US.

Transistors and other components used in electronic devices are currently made of 3D materials such as silicon and consist of multiple layers on a glass substrate. But the downside to 3D materials is that electrons bounce around inside the layers in all directions.

The benefit of 2D materials is that the material is made of one layer the thickness of just one or two atoms. Consequently, the electrons "can only move in one layer so it's much faster," said Tiwari, who led the team.

While researchers in this field have recently discovered new types of 2D material such as graphene, molybdenundisulfide and borophene, they have been materials that only allow the movement of N-type, or negative, electrons.

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